DESCRIPTION
The μPA2201T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

FEATURES
• Low on-state resistance
   RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A)
   RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)
• Built-in gate protection diode
• 2.5 V Gate drive available