P4KE11A-E3/54 데이터시트 - New Jersey Semiconductor
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P4KE11A-E3/54
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New Jersey Semiconductor
FEATURES
• Glass passivated chip junction
• Available inuni-directional andbi-directional
• 400 W peak pulse power capability with a 10/1000 us waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Lowincremental surge resistance
• Solder dip 275 °C max. 10s, per JESD 22-B106
• AEC-Q101 qualified
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