Description
The OPI2100 consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard plastic six pin dual-in-line package. This device is designed to directly drive from 1 to 10 TTL loads and has very good output sinking characteristics at low sink current.

FEATUREs
• 4kV isolation
• High current transfer ratio
• Direct interface with up to 10 TTL loads
• UL recognized File No. E58730