OPB710(1996) 데이터시트 - Optek Technology
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OPB710
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Optek Technology
Description:
The OPB710 and OPB710Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor.
FEATUREs:
• Phototransistor output
• Unfocused for sensing diffuse surface
• Mounted on standard TO-72 header
• Available in clear encapsulating epoxy (OPB710) or filtered (OPB710F)
to reduce the effect of visible or fluorescent light.
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