datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  California Eastern Laboratories.  >>> NX8510UD PDF

NX8510UD 데이터시트 - California Eastern Laboratories.

NX8510UD image

부품명
NX8510UD

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
351.9 kB

제조사
CEL
California Eastern Laboratories. CEL

DESCRIPTION
NECs NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP transceiver with LC duplex receptacle. This device is ideal for 2.5 Gb/s CWDM application.


FEATURES
• INTERNAL OPTICAL ISOLATOR
• PEAK EMISSION WAVELENGTH
   λp = 1 470 to 1 610 nm
   (Based on ITU-T recommendations)
• OPTICAL OUTPUT POWER
   Pf = 2.0 mW
• OPERATING CASE TEMPERATURE RANGE
   TC = -20 to +85°C
• LOW THRESHOLD CURRENT
   lth = 10 mA TYP. @ TC = 25°C
• SIDE MODE SUPPRESSION RATIO
   SMSR = 40 dB
• InGaAs MONITOR PIN-PD
• SMALL PACKAGE
   φ 3.8 mm TOSA (Total length 12.0 mm MAX.)


부품명
상세내역
PDF
제조사
NEC's 1550 nm InGaAsP MQW-DFB TOSA FOR LONG HAUL 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NEC's InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB TOSA FOR LONG HAUL 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
California Eastern Laboratories.
NECs 1310 nm InGaAsP MQW DFB TOSA FOR SHORT HAUL 2.5 Gb/s APPLICATION
California Eastern Laboratories.
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]