제조사
![CEL](/logo/CEL.png)
California Eastern Laboratories.
![CEL](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
NECs NX5313 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
FEATURES
• OPTICAL OUTPUT POWER: Po = 13.0 mW
• LOW THRESHOLD CURRENT : Ith = 6 mA
• DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A
• WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE: ø5.6 mm
• FOCAL POINT: 6.35 mm
• LD BEAM ANGLE OPTIMIZED FOR 8 DEGREE ANGLED SMF
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE
NEC => Renesas Technology
NECʼs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
NEC => Renesas Technology
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Electronics
NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
California Eastern Laboratories.