Power MOSFET and Schottky Diode

−8 V, −4.3 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm, WDFN
Package

FEATUREs
• WDFN 2x2 mm Package with Exposed Drain Pad for
   Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.5 V VGS Rated RDS(on)
• Low VF, 2 A Schottky Diode
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• This is a Pb−Free Device

APPLICATIONs
• DC−DC Buck Converter
• Low Voltage Hard Disk DC Power Source