Description:
The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications.

FEATUREs:
Low Reverse Transfer Capacitance – Crss = 0.03pf (Max)
High Forward Transfer Admittance – |yfe| = 0–20 mmhos
Diode Protected Gates

3
4
Gate 1 Source
Absolute Maximum Ratings:
Drain Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Vdc
Drain–Gate Voltage, VDG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
                           VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
Gate Current, IG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
                   IG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
Drain Current–Continuous, ID . . . . . . . . . . . . . . . . . . . . . . . . . 60mAdc
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . 360mW
Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . 1.2Watt
Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Storage Channel Temperature Range, Tstg . . . . . . . –65 to +200°C
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . –65 to +175°C
Lead Temperature, 1/16” from Seated Surface for 10 Seconds, TL . . . . 300°C