Description:
The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications.

Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V
Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . .. . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . 2A
Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . .. . . . . . . . . 12W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . .. . . . . . . . +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . .  . –55° to +85°C