Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications.

FEATUREs:
DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A
Collector–Emitter Sustaining Voltage: VCEO(sus)= 70V Min
High Current–Gain Bandwidth Product:
  fT= 4MHz Min @ IC= 500mA (NTE196)
    = 10MHz Min @ IC= 500mA (NTE197)