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NSR05301MX4 데이터시트 - ON Semiconductor

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NSR05301MX4

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ONSEMI
ON Semiconductor ONSEMI

Trench-based Schottky Diode, 500 mA, 30 V

These Schottky diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro−packaging ideal for space constrained applications.


FEATUREs
• Smallest Package Available (01005); 0.445mm x 0.24mm
• 500 mA of Continuous Forward Current
• Low Forward Voltage Drop − 430 mV (Typical) @ IF = 200 mA
• Low Reverse Current − 25 μA (Typical) @ VR = 30 V
• Low Reverse Recovery Time − 9 ns Typical
• Low Capacitance − 19 pF Typical

Typical Applications
• Mobile and Wearable Devices
• LED Boost Converters
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection


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