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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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NRVBS260T3G(2013) 데이터시트 - ON Semiconductor

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NRVBS260T3G

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Surface Mount Schottky Power Rectifier
SMB Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.


FEATUREs
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVB Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements; AEC−Q101
   Qualified and PPAP Capable
• These are Pb−Free Devices

Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• ESD Ratings:
   ♦ Machine Model = C
   ♦ Human Body Model = 3B


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