NP16N04YUG 데이터시트 - Renesas Electronics
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NP16N04YUG
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Renesas Electronics
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATUREs
• Low on-state resistance
⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
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