The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.

FEATUREs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• All Outputs Buffered
• Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range
• Double Diode Protection on All Inputs
• Pin−for−Pin Replacements for Corresponding CD4000 Series B Suffix Devices
• NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant