This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.

FEATUREs
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Optimized for High Speed Switching
• 10 μs Short Circuit Capability
• These are Pb−Free Devices

Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding