IGBT with Monolithic Reverse Conducting Diode

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.

FEATUREs
• Extremely Efficient Trench with Fieldstop Technology
• Low Conduction Design for Soft Switching Application
• Reduced Power Dissipation in Inducting Heating Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device

Typical Applications
• Inductive Heating
• Air Conditioning PFC
• Welding