NESG3033M14 데이터시트 - Renesas Electronics
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NESG3033M14
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Renesas Electronics
FEATURES
• The NESG3033M14 is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
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제조사
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