NES1821B-30 데이터시트 - NEC => Renesas Technology
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NES1821B-30
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NEC => Renesas Technology
DESCRIPTION
The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band.
Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.
The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for surface stability.
FEATURES
• High output power
• High gain
• High power added efficiency
• Internally matched input
• High reliability
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상세내역
PDF
제조사
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET ( Rev : 1996 )
NEC => Renesas Technology
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