General Description
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V
                       RDS(ON) = 0.15 Ω @ VGS = 4.5 V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.
■ Dual MOSFET in surface mount package.