Single 6 A High-Speed, Low-Side SiC MOSFET Driver

   The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.

FEATUREs
• Automotive Qualified to AEC−Q100 with Grade 1 Temperature
   Range
• High Peak Output Current with Split Output Stages to Allow
   Independent Turn−ON/Turn−OFF Adjustment;
   ✦ Source Capability: 6 A
   ✦ Sink Capability: 6 A
• Extended Positive Voltage Rating for Efficient SiC MOSFET
   Operation during the Conduction Period
• Adjustable, On−board Regulated Charge Pump
• Negative Voltage Drive for Fast Turn−off
• Built−in Negative Charge Pump
• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply
• Adjustable Under−Voltage Lockout
• Desaturation Function
• Small & Low Parasitic Inductance QFN24 Package with Wettable
   Flank

Typical Applications
• Driving SiC MOSFET for Automotive Applications
• Automotive Inverters, Converter, and Motor Drivers
• PFC, AC to DC and DC to DC Converters