Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode.

FEATUREs
• Dual voltage rails for optimum power & performance
    Vcc - 2.7V - 3.3V
    Vccq - 2.7V to 3.3V
• Fast Cycle Times
    TACC < 70 nS (60ns future)
    TPACC < 25 nS
• Very low standby current
    ISB < 170µA
• Very low operating current
    Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)