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N25Q00AA11GSF40F 데이터시트 - Micron Technology

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부품명
N25Q00AA11GSF40F

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89 Pages

File Size
1.2 MB

제조사
Micron
Micron Technology Micron

Device Description
   N25Q is a high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.


FEATUREs
   The 1Gb N25Q is a stacked device that contains four 256Mb die. From a user standpoint this stacked device behaves as a monolithic device, except with regard to READ MEMORY and ERASE operations and status polling. The device contains a single chip select (S#).
   The memory is organized as 2048 (64KB) main sectors that are further divided into 16 subsectors each (32,768 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or single die (256Mb) at a time.
   The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections
   The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command.
   The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.


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