GENERAL DESCRIPTIONS
The MX30UFxG26(28)AB are 2Gb to 4Gb SLC NAND Flash memory devices. Its standard NAND Flash features and reliable quality of typical P/E cycles 100K (with ECC), which make it most suitable for embedded system code and data storage.

The product family requires 8-bit ECC per 540B.

This device is typically accessed in pages of 2,160 bytes (x8) or 1080 words (x16), both for read and for program operations.

The devices array is organized as thousands of blocks, which is composed by 64 pages of (1024+32) words in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 56 words for ECC and other purposes. The device has an on-chip buffer of 2160 bytes or 1080 words (x16) for data load and access.

The Cache Read Operation of the MX30UFxG26(28)AB enables first-byte read-access latency of 25us and sequential read of 25ns and the latency time of next sequential page will be shorten from tR to tRCBSY.

The MX30UFxG26(28)AB power consumption is 30mA during all modes of operations (Read/Program/Erase), and 50uA in standby mode.