TMOS E−FET High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate

This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated
   Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
   Transient Suppressor — Absorbs High Energy in the Avalanche
   Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete
   Fast Recovery Diode