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MT46V4M32 데이터시트 - Micron Technology

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MT46V4M32

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66 Pages

File Size
1.7 MB

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Micron
Micron Technology Micron

GENERAL DESCRIPTION
The 128Mb (x32) DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728- bits. It is internally configured as a quadbank DRAM.


FEATURES
• VDD = +2.5V ±0.125V, VDDQ = +2.5V ±0.125V
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Reduced and matched output drive options
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
• Programmable burst lengths: 2, 4, 8, or full page
• 32ms, 4,096-cycle auto refresh
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 2.5V I/O (SSTL_2 compatible)
• DQS per byte on the FBGA package
• 1.8V VDDQ option for FBGA package
• tRAS lockout

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제조사
Double Data Rate (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM ( Rev : 2001 )
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
DOUBLE DATA RATE (DDR) SDRAM
Micron Technology
184 - Pin Registered Double-Data-Rate SDRAM Module DDR SDRAM
Unspecified
256Mb Double Data Rate SDRAM
Unspecified

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