Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAH(G)Z52F120B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (MSAHZ52F120A only)