DESCRIPTION:
The MS2205 is a gold metallized, silicon NPN power transistor designed for pulsed applications with low duty cycles, such as IFF, DME, and TACAN. It can withstand infinite VSWR under rated conditions. The MS2205 is housed in the .250" input-matched stripline package, resulting in improved broadband performance and low thermal resistance.

FEATUREs
· DESIGNED FOR HIGH POWER PULSED IFF, DME,TACAN APPLICATIONS
· 6.0 W (typ.) IFF 1030–1090 MHz
· 5.0 W (min.) DME 1025–1150 MHz
· 4.0 W (typ.) TACAN 960–1215 MHz
· GAIN 9 dB (typ.)
· VSWR ¥:1 AT RATED CONDITIONS
· LOW THERMAL RESISTANCE
· EMITTER BALLASTED
· INPUT MATCHED COMMON-BASE CONFIGURATION