The RF Line
NPN Silicon RF Power Transistor

Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.

• Specified 12.5 Volt, 512 MHz Characteristics
   Output Power = 65 Watts
   Minimum Gain = 4.15 dB
   Minimum Efficiency = 50%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
   from 400 to 520 MHz
• Built–In Matching Network for Broadband Operation
• Triple Ion Implanted for More Consistent Characteristics
• Implanted Emitter Ballast Resistors for Improved Ruggedness
• Silicon Nitride Passivated
• Capable of Surviving Load Mismatch Stress at all Phase Angles with
   20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive