The RF Line
NPN Silicon Broadband Push–Pull RF Power Transistor

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

• Specified 28 Volt, 400 MHz Characteristics —
   Output Power = 125 W
   Typical Gain = 10 dB
   Efficiency = 55% (Typ)
• Built–In Input Impedance Matching Networks for Broadband Operation
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Gold Metallization System for High Reliability
• 100% Tested for Load Mismatch