The RF Line
Microwave Pulse Power Transistor

Designed for 1025–1150 MHz pulse common base amplifier applications such as DME.

• Guaranteed Performance @ 1090 MHz
    Output Power = 500 Watts Peak
    Gain = 5.2 dB Min
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input Matching
• Characterized with 10 µs, 1.0% Duty Cycle Pulses