MRF136 데이터시트 - Tyco Electronics
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MRF136
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Tyco Electronics
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs
Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
• Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60% (Typical)
• Small–Signal and Large–Signal Characterization
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2007 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Motorola => Freescale
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
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