INTRODUCTION
   The MR0D08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR0D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0D08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

FEATURES
• +3.3 Volt power supply
• I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
• Fast 45 ns read/write cycle
• SRAM compatible timing
• Unlimited read & write endurance
• Data always non-volatile for >20-years at temperature
• RoHS-compliant small footprint BGA package

BenefitS
• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems
   for simpler, more efficient designs
• Improves reliability by replacing battery-backed SRAM