TOSHIBA Power Transistor Module Silicon NPN Epitaxial
(Type Four Darlington Power Transistors in One)
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
• Small package by full molding (SIP 10 pins)
• Built-in resistance (RB).
• Surge voltage is clamped by zener diode (C-B).
• Low VCE (sat): VCE (sat)= 1.5 V (max) (IC= 1 A, VBH= 4.2 V)
• High DC current gain: hFE= 2000 (min) (VCE= 2 V, IC= 1 A)