Description
The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting.

FEATUREs
■ U.L. Recognized (File #E90700, Volume 2)
■ VDE Recognized (File #13616) (add option “V” for VDE approval, i.e, MOCD223V-M)
■ Convenient Plastic SOIC-8 Surface Mountable Package Style
■ High Current Transfer Ratio of 500% Minimum at IF = 1mA
■ Minimum BVCEO of 30 Volts Guaranteed
■ Standard SOIC-8 Footprint, with 0.050" Lead Spacing
■ Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
■ High Input-Output Isolation Voltage of 2500 VAC(rms) Guaranteed

APPLICATIONs
■ Interfacing and coupling systems of different potentials and impedances
■ General purpose switching circuits
■ Monitor and detection circuits