General Description
The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATUREs
■ High voltage:
   – MOC8204M, BVCER = 400V
   – H11D1M, H11D2M, BVCER = 300V
   – H11D3M, BVCER = 200V
■ High isolation voltage:
   – 7500 VAC peak, 1 second
■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)

APPLICATIONs
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls