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MMG3010NT1 데이터시트 - NXP Semiconductors.

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MMG3010NT1

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15 Pages

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NXP
NXP Semiconductors. NXP

0-6000 MHz, 15 dB 17 dBm InGaP HBT

The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS , BWA , WLL , PHS , CATV, VHF, UHF, UMTS and general
small-signal RF.


FEATUREs
• Frequency: 0 to 6000 MHz
• P1dB: 17 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 31 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.


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제조사
Heterojunction Bipolar Transistor (InGaP HBT)
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Heterojunction Bipolar Transistor (InGaP HBT)
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Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2005 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor

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