datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  NXP Semiconductors.  >>> MMG3006NT1 PDF

MMG3006NT1 데이터시트 - NXP Semiconductors.

MMG3006NT1 image

부품명
MMG3006NT1

Other PDF
  no available.

PDF
DOWNLOAD     

page
24 Pages

File Size
460.7 kB

제조사
NXP
NXP Semiconductors. NXP

400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA

The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.


FEATUREs
● Frequency: 400--2400 MHz
● P1dB: 33 dBm @ 900 MHz
● Small--signal gain: 17.5 dB @ 900 MHz
● Third order output intercept point: 49 dBm @ 900 MHz
● Single 5 V supply
● Internally input prematched to 50 ohms


부품명
상세내역
PDF
제조사
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2011 )
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2017 )
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
Freescale Semiconductor

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]