Complementary Darlington Silicon Power Transistors

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

FEATUREs
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
   VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
                      = 200 Vdc (Min) — MJH11020, 19
                      = 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
   VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
                   = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• These are Pb−Free Devices