MJE803T 데이터시트 - Inchange Semiconductor
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MJE803T
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Inchange Semiconductor
DESCRIPTION
• Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V
• DC Current Gain— : hFE = 750(Min) @ IC= 2A
• Complement to Type MJE703T
APPLICATIONS
• Designed for general-purpose amplifier and low-speed switching applications
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