MJE802 데이터시트 - ON Semiconductor
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MJE802
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ON Semiconductor
These devices are designed for general−purpose amplifier and low−speed switching applications.
FEATUREs
• High DC Current Gain − hFE
= 2000 (Typ) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
• Choice of Packages − MJE700 and MJE800 Series
• Pb−Free Packages are Available*
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제조사
Plastic Darlington Complementary Silicon Power Transistors ( Rev : 2002 )
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