MJE800 데이터시트 - New Jersey Semiconductor
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MJE800
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New Jersey Semiconductor
... designed for general-purpose amplifier and low-speed switching applications.
• High DCCurrent Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage
Multiplication
• Choice of Packages —
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
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