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MJE210G(2013) 데이터시트 - ON Semiconductor

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MJE210G

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Complementary Silicon Power Plastic Transistors

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Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications.


FEATUREs
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant*


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