High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

FEATUREs
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*