MJ10023D 데이터시트 - ON Semiconductor
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MJ10023D
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ON Semiconductor
SWITCHMODE™ Series
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time @ 25°C (Typ)
300 ns Inductive Storage Time @ 25°C (Typ)
• Operating Temperature Range – 65 to + 200°C
• 100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
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40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
Motorola => Freescale
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
New Jersey Semiconductor
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
ON Semiconductor
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
Motorola => Freescale
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
New Jersey Semiconductor
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