MJ10005(V2) 데이터시트 - New Jersey Semiconductor
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MJ10005
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New Jersey Semiconductor
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor with Base-Emitter
Speedup DiodeThe MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
40 ns Inductive Fall Time — 25°C (Typ)
650 ns Inductive Storage Time — 25°C(Typ)
Operating Temperature Range –65 to +200°C
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
Motorola => Freescale
16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS
Motorola => Freescale
15 AMPERE NPN SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 175 WATTS
New Jersey Semiconductor
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