DESCRIPTION
The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=1.9 - 2.0 GHz
High power gain
GLP = 13 dB (TYP.) @ f=1.9 - 2.0GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 1.9 - 2.0 GHz band power amplifier
item 51 : 1.9 - 2.0 GHz band digital radio communication