DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES
Low noise figure @ f=12GHz
  MGF4316G : NF min.=0.80dB (MAX.)
  MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
  Gs=12.0 dB (MIN.) @ f=12GHz

APPLICATION
L to K band low noise amplifiers.