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MC-4R64CPE6C 데이터시트 - NEC => Renesas Technology

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MC-4R64CPE6C

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NEC
NEC => Renesas Technology NEC

Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.
MC-4R64CPE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.


FEATUREs
• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
• Each RDRAM® has 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Low power and powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support

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제조사
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMMTM Module 64M-BYTE (32M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
NEC => Renesas Technology
Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 64M-BYTE (32M-WORD x 18-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
NEC => Renesas Technology
Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus DRAM RIMM™ Module 128M-BYTE (64M-WORD x 16-BIT)
Elpida Memory, Inc
Direct Rambus™ DRAM RIMM™ Module 128M-BYTE (64M-WORD x 16-BIT)
NEC => Renesas Technology

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