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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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MBRS340PT3G 데이터시트 - ON Semiconductor

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부품명
MBRS340PT3G

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  2015  

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5 Pages

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200.2 kB

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ONSEMI
ON Semiconductor ONSEMI

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.


FEATUREs
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
   (0.5 V Max @ 3.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard-Ring for Stress Protection
• Device Passes ISO 7637 Pulse #1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings:
   ♦ Machine Model = C (> 400 V)
   ♦ Human Body Model = 3B (> 8000 V)


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