SWITCHMODE Schottky Power Rectifier
TO247 Power Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

FEATUREs
• Highly Stable Oxide Passivated Junction
• Guardring for Overvoltage Protection
• Low Forward Voltage Drop
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for
   Parallel Operation at Full Rating.
• Full Electrical Isolation without Additional Hardware
• Pb−Free Package is Available*

Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
   Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
   260°C Max. for 10 Seconds